Reference Search

[n]	J. Lyles et al., “New concepts for a high power 805 MHz RF amplifier for LANSCE using Gallium Nitride semiconductors”, in Proc. LINAC'24, Chicago, IL, USA, Aug. 2024, pp. 238-240. doi:10.18429/JACoW-LINAC2024-MOPB088

Paper Title: New concepts for a high power 805 MHz RF amplifier for LANSCE using Gallium Nitride semiconductors
Conference: 32nd Linear Accelerator Conf. (LINAC'24)
Paper ID: MOPB088
Location in proceedings: 238-240
Original Author String: J. Lyles, A. Waghmare, B. Comiskey, E. Brown, J. Valladares, J. Castellano, J. Bradley III, J. Alvarez Prieto, M. Rodriguez, M. Sanchez Barrueta, M. Prokop, M. Brown, P. Van Rooy, S. Baily, S. Rocha, S. Russell, S. Kwon, W. Hall

Associated Authors

• S. Kwon
• M. Rodriguez
• A. Waghmare
• M. Brown
• J. Lyles
• J. Bradley III
• M. Prokop
• S. Russell
• M. Sanchez Barrueta
• P. Van Rooy
• W. hall
• S. Baily
• E. Brown
• J. Valladares
• B. Comiskey
• S. Rocha
• J. Castellano
• J. Alvarez Prieto