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[n]	K. Sakaue, A. Endo, and M. Washio, “Design of High Brightness Light Source based on Laser-Compton Undulator for EUV Lithography Mask Inspection”, in Proc. IPAC'10, Kyoto, Japan, May 2010, paper MOPEA036, pp. 148-150. 

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Paper Title: Design of High Brightness Light Source based on Laser-Compton Undulator for EUV Lithography Mask Inspection
Paper URL: http://accelconf.web.cern.ch/IPAC10/papers/MOPEA036.pdf
Conference: 1st Int. Particle Accelerator Conf. (IPAC'10)
Paper ID: MOPEA036
Location in proceedings: 148-150
Original Author String: K. Sakaue, A. Endo, M. Washio, RISE, Tokyo

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