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[n]	J. Poate and M. I. Current, “Industrial Applications of Ion Implantation for Doping and Modification of Semiconductor Materials”, presented at the PAC'01, Chicago, IL, USA, Jun. 2001, paper FOAA008, unpublished. 

[n]	S. Schröder et al., “Precision Control of Plasma Wakefields for Highly Efficient and Energy-Spread-Preserving Electron Acceleration”, presented at the IPAC'21, Campinas, Brazil, May 2021, paper TUXB02, unpublished. 

For LaTeX

%\cite{Poate:PAC01-FOAA008} \bibitem{Poate:PAC01-FOAA008} J. Poate and M. I. Current, \textquotedblleft{Industrial Applications of Ion Implantation for Doping and Modification of Semiconductor Materials}\textquotedblright, presented at the PAC’01, Chicago, IL, USA, Jun. 2001, paper FOAA008, unpublished. %\cite{Schröder:IPAC21-TUXB02} \bibitem{Schröder:IPAC21-TUXB02} S. Schröder \emph{et al.}, \textquotedblleft{Precision Control of Plasma Wakefields for Highly Efficient and Energy-Spread-Preserving Electron Acceleration}\textquotedblright, presented at the IPAC’21, Campinas, Brazil, May 2021, paper TUXB02, unpublished.

For BibTeX

@unpublished{poate:pac01-foaa008, author = {J. Poate and M. I. Current}, title = {{Industrial Applications of Ion Implantation for Doping and Modification of Semiconductor Materials}}, booktitle = {Proc. PAC'01}, paper = {FOAA008}, venue = {Chicago, IL, USA, Jun. 2001}, intype = {presented at the}, publisher = {JACoW Publishing, Geneva, Switzerland}, note = {presented at PAC'01, Chicago, IL, USA, Jun. 2001, paper FOAA008, unpublished}, language = {english} } @unpublished{schröder:ipac21-tuxb02, author = {S. Schröder and others}, title = {{Precision Control of Plasma Wakefields for Highly Efficient and Energy-Spread-Preserving Electron Acceleration}}, booktitle = {Proc. IPAC'21}, paper = {TUXB02}, venue = {Campinas, Brazil, May 2021}, intype = {presented at the}, publisher = {JACoW Publishing, Geneva, Switzerland}, note = {presented at IPAC'21, Campinas, Brazil, May 2021, paper TUXB02, unpublished}, language = {english} }

References

• J. Poate and M. I. Current, “Industrial Applications of Ion Implantation for Doping and Modification of Semiconductor Materials”, presented at the 19th Particle Accelerator Conf. (PAC'01), Chicago, IL, USA, Jun. 2001, paper FOAA008, unpublished.
• S. Schröder et al., “Precision Control of Plasma Wakefields for Highly Efficient and Energy-Spread-Preserving Electron Acceleration”, presented at the 12th Int. Particle Accelerator Conf. (IPAC'21), Campinas, Brazil, May 2021, paper TUXB02, unpublished.