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[n]	S. Fu, J. Peng, and Z. Sun, “Design of 132MeV DTL for CSNS”, in Proc. LINAC'06, Knoxville, TN, USA, Aug. 2006, paper TUP069, pp. 412-414. 

[n]	T. Yang, “Modular accelerator pulse power supply design based on SiC MOSFET”, presented at the HIAT'25, East Lansing, MI, USA, Jun. 2025, paper WEP23, unpublished. 

For LaTeX

%\cite{SFu:LINAC06-TUP069} \bibitem{SFu:LINAC06-TUP069} S. Fu, J. Peng, and Z. Sun, \textquotedblleft{Design of 132MeV DTL for CSNS}\textquotedblright, in \emph{Proc. LINAC’06}, Knoxville, TN, USA, Aug. 2006, paper TUP069, pp. 412--414. %\cite{Yang:HIAT25-WEP23} \bibitem{Yang:HIAT25-WEP23} T. Yang, \textquotedblleft{Modular accelerator pulse power supply design based on SiC MOSFET}\textquotedblright, presented at the HIAT’25, East Lansing, MI, USA, Jun. 2025, paper WEP23, unpublished.

For BibTeX

@inproceedings{sfu:linac06-tup069, author = {S. Fu and J. Peng and Z. Sun}, title = {{Design of 132MeV DTL for CSNS}}, booktitle = {Proc. LINAC'06}, pages = {412--414}, paper = {TUP069}, venue = {Knoxville, TN, USA, Aug. 2006}, series = {Linear Accelerator Conference}, number = {23}, publisher = {JACoW Publishing, Geneva, Switzerland}, url = {https://jacow.org/l06/papers/TUP069.pdf}, language = {english} } @unpublished{yang:hiat25-wep23, author = {T. Yang}, title = {{Modular accelerator pulse power supply design based on SiC MOSFET}}, booktitle = {Proc. HIAT'25}, pages = {}, paper = {WEP23}, venue = {East Lansing, MI, USA}, intype = {presented at the}, series = {International Conference on Heavy Ion Accelerator Technology}, number = {16}, publisher = {JACoW Publishing, Geneva, Switzerland}, month = {10}, year = {2025}, issn = {2673-5547}, isbn = {978-3-95-450260-8}, note = {presented at HIAT'25, East Lansing, MI, USA, Jun. 2025, paper WEP23, unpublished}, language = {english} }

References

• S. Fu, J. Peng, and Z. Sun, “Design of 132MeV DTL for CSNS”, in Proc. 23rd Linear Accelerator Conf. (LINAC'06), Knoxville, TN, USA, Aug. 2006, paper TUP069, pp. 412-414.
• T. Yang, “Modular accelerator pulse power supply design based on SiC MOSFET”, presented at the 16th Int. Conf. on Heavy Ion Accelerator Technology (HIAT'25), East Lansing, MI, USA, Jun. 2025, paper WEP23, unpublished.