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[n]	J. Poate and M. I. Current, “Industrial Applications of Ion Implantation for Doping and Modification of Semiconductor Materials”, presented at the PAC'01, Chicago, IL, USA, Jun. 2001, paper FOAA008, unpublished. 

[n]	O. Boine-Frankenheim, “High Intensity Beam Dynamics Preparations for FAIR”, presented at the HB'21, Batavia, IL, USA, Oct. 2021, paper WEIPI2, unpublished. 

[n]	R. A. Gerber et al., “Light Ion Sources for ICF”, in Proc. PAC'85, Vancouver, Canada, May 1985, pp. 1718-1723. 

For LaTeX

%\cite{Poate:PAC01-FOAA008} \bibitem{Poate:PAC01-FOAA008} J. Poate and M. I. Current, \textquotedblleft{Industrial Applications of Ion Implantation for Doping and Modification of Semiconductor Materials}\textquotedblright, presented at the PAC’01, Chicago, IL, USA, Jun. 2001, paper FOAA008, unpublished. %\cite{Boine-Frankenheim:HB21-WEIPI2} \bibitem{Boine-Frankenheim:HB21-WEIPI2} O. Boine-Frankenheim, \textquotedblleft{High Intensity Beam Dynamics Preparations for FAIR}\textquotedblright, presented at the HB’21, Batavia, IL, USA, Oct. 2021, paper WEIPI2, unpublished. %\cite{Gerber:PAC85} \bibitem{Gerber:PAC85} R. A. Gerber \emph{et al.}, \textquotedblleft{Light Ion Sources for ICF}\textquotedblright, in \emph{Proc. PAC’85}, Vancouver, Canada, May 1985, pp. 1718--1723.

For BibTeX

@unpublished{poate:pac01-foaa008, author = {J. Poate and M. I. Current}, title = {{Industrial Applications of Ion Implantation for Doping and Modification of Semiconductor Materials}}, booktitle = {Proc. PAC'01}, paper = {FOAA008}, venue = {Chicago, IL, USA, Jun. 2001}, intype = {presented at the}, publisher = {JACoW Publishing, Geneva, Switzerland}, note = {presented at PAC'01, Chicago, IL, USA, Jun. 2001, paper FOAA008, unpublished}, language = {english} } @unpublished{boine-frankenheim:hb21-weipi2, author = {O. Boine-Frankenheim}, title = {{High Intensity Beam Dynamics Preparations for FAIR}}, booktitle = {Proc. HB'21}, pages = {}, paper = {WEIPI2}, venue = {Batavia, IL, USA}, intype = {presented at the}, series = {ICFA Advanced Beam Dynamics Workshop on High-Intensity and High-Brightness Hadron Beams}, number = {64}, publisher = {JACoW Publishing, Geneva, Switzerland}, month = {4}, year = {2022}, issn = {2673-5571}, isbn = {978-3-95-450225-7}, note = {presented at HB'21, Batavia, IL, USA, Oct. 2021, paper WEIPI2, unpublished}, language = {english} } @inproceedings{gerber:pac85, author = {R. A. Gerber and others}, title = {{Light Ion Sources for ICF}}, booktitle = {Proc. PAC'85}, pages = {1718--1723}, paper = {}, venue = {Vancouver, Canada, May 1985}, publisher = {JACoW Publishing, Geneva, Switzerland}, language = {english} }

References

• J. Poate and M. I. Current, “Industrial Applications of Ion Implantation for Doping and Modification of Semiconductor Materials”, presented at the 19th Particle Accelerator Conf. (PAC'01), Chicago, IL, USA, Jun. 2001, paper FOAA008, unpublished.
• O. Boine-Frankenheim, “High Intensity Beam Dynamics Preparations for FAIR”, presented at the 64th Advanced Beam Dynamics Workshop on High-Intensity and High-Brightness Hadron Beams (HB'21), Batavia, IL, USA, Oct. 2021, paper WEIPI2, unpublished.
• R. A. Gerber et al., “Light Ion Sources for ICF”, in Proc. 11th Particle Accelerator Conf. (PAC'85), Vancouver, Canada, May 1985, pp. 1718-1723.